Open    Access



Controllable Preparation and Optical Anisotropy of High-Quality GeS



Author(s)

Lingang Yang

Full-Text PDF XML     71 Views

DOI:10.17265/2161-6213/2026.4-6.001

College of Science, China Jiliang University, Zhejiang, Hangzhou 310018, China

Germanium sulfide (GeS) has emerged as a promising candidate for the development of polarization-sensitive photodetectors and nonlinear optical devices, owing to its appealing attributes including optical anisotropy, high carrier mobility, tunable electronic and optical properties, natural abundance, and environmental benignity. Nevertheless, GeS obtained by conventional preparation methods suffers from limited lateral size, irregular morphology, and high defect density. To overcome these drawbacks, herein we report the controllable preparation of high-quality GeS via a spatially confined chemical vapor deposition (SPCVD) approach. The crystal structure and polarized optical properties of the as-grown GeS are systematically investigated. It is revealed that the material possesses a band gap of 1.55 eV and exhibits strong optical absorption in the visible–ultraviolet region. Comprehensive polarization-resolved optical measurements demonstrate an optical polarization ratio up to 1.62. This study offers an effective synthetic strategy for the preparation of high-quality two-dimensional layered GeS crystals, and provides theoretical and experimental support for its applications in polarized optical devices.

Chemical vapor deposition, optical anisotropy, polarization response, photodetector.